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Volume 1, Issue 6 December 2013

S.No. Title Page No.
01
Electrical Properties of Copper Selenide Thin Film
Author: Ezenwa I. A., Okereke N. A. and Okoli L. N.
Abstract: Copper selenide (CuSe) thin films was grown by Chemical Bath method on glass substrate at room temperature. The electrical properties of the deposited thin films were investigated using standard four point probe technique. Our result shows variation of the sheet resistance of the deposited films from 23Ω to 45Ω, the sheet resistivity was found to vary from 5.14X 10-6Ωm to159X10-6Ωm , while the electrical conductivity varies from 0.629X 104 Ω-1m-1 to 19.4X104Ω-1m-1 . Our values of the resistivity of the films shows that CuSe are semiconducting films
001-004
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02
A Thermal Economic Dispatch Problem Solving By Particle Swarm Optimization
Author: Manjeet Singh, Divesh Thareja
Abstract: The primary objective of the ELD is to minimize the total cost of generation while maintaining the operational costs of the available generation resources. This paper consist a new approach to solve thermal units economic dispatch (ED) problems. Economic dispatch is a highly constrained optimization problem in power system encompassing interaction among decision variables. The particle swarm optimization (PSO) technique is demonstrated. This paper presents a Particle Swarm Optimization (PSO) based solution for optimal flow with generating units having fuel costs curves while satisfying the constraints.PSO has been examined and tested for standard 10 generating units.
005-009
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03
A HIGH STEP UP QUASI RESONANT BOOST CONVERTER USING ZCS WITH PUSH PULL TOPOLOGY
Author: R.S.Preethishri, M.SasiKumar
Abstract: In this project reduced switching losses and high efficiency is proposed for quasi resonant converter. An AC/DC quasi resonant converter with push pull topology is coupled to two distributed boost inductors into a single magnetic core which hereby reducing the circuit volume and the cost are the development targets of switching power supply today. The quasi resonant converter has ideally zero switching losses as it is having a salient feature that the switching devices can be either switched on at zero voltage or switched off at zero current. The boost power factor corrector operates in the transition mode with a constant on time and variable switching frequencies, wherein the quasi resonant valley switching of the switch, decreases the turn on losses and zero current switching(ZCS) of the output diode in order to decrease the switching losses and improving the conversion efficiency. QRC-ZCS has low total harmonic distortion as conducted on the prototype with experimental and simulation results.
010-017
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04
Preparation of ITO thin film by Sol-Gel method
Author: Harith Ibrahem, Mariam Moghdad
Abstract: Highly transparent and conductive thin films ITO have been prepared on glass substrate using spray pyrolysis method. The ITO deposited at substrate temperature 400⁰ C their thickness was approximately (150 nm), and at different doping ratios(5,10,15,20) of Sn Wt.% annealed at ( 500-550 )⁰C for one hour . The structural, optical and electrical properties for all films were studied. X-ray diffraction data showed that all films have polycrystalline nature cubic for ITOwith major reflex along (222) plane .The absorbance and transmittance spectra data for the films were recorded at room temperature in the wavelength range (200-1100nm), which were used to determine the optical properties of the films. All films are highly transparent (greater than 91%) in visible region of electromagnetic spectrum, the direct band gap was in the range (3.6-3.88 ) eV.
018-022
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05
INFLUENCE OF ILLUMINATION WAVELENGTH ON THE ELECTRICAL PARAMETERS OF A VERTICAL JUNCTION SILICON SOLAR CELL UNDER FREQUENCY MODULATION
Author: Sahin GÔKAN, Ndeye THIAM; Mor NDIAYE, Amadou DIAO, Babacar MBOW and Grégoire SISSOKO
Abstract: The influence of the illumination wavelength on the electrical parameters of a polycrystalline vertical junction silicon solar cell is theoretically analyzed. From the excess minority carrier’s density, the photocurrent density and photovoltage across the junction are determined. By help of both photocurrent and photovoltage, the series and shunt resistance are deduced and the solar cell associated capacitance is calculated.
023-028
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