Call for Comming Issue
 

Volume 1, Issue 3 August 2013

S.No. Title Page No.
01
Proportional planimeter Current Chopping management (PI-CCC) based on Switched Reluctance Generator (SRG)
Author: Nupur Prakash singh
Abstract: This paper given a completely unique Proportional planimeter Current Chopping management (PI-CCC) based on Switched Reluctance Generator (SRG).The fundamental principle of the PI-CCC is predicated on the minimization of force ripple of the SRG. The excitation parameters for the SRG system operates at sufficiently high speed that it operates within the single pulse mode. during this paper PI-CCC based mostly SRG modeled square measure simulated by mistreatment MATLAB/SIMULINK. during this model to research each dynamic and steady state system output its severally, the facility convertor, excitation supply, and hundreds were simulated supported SIMULINK/Sim power systems (PSB).
001-009
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02
The event Associate in Nursingd analysis of an integrated accommodative distance protection scheme
Author: Jyoti Sukla
Abstract: The protection of series remunerated lines is taken into account to be one among the foremost difficult tasks. The paper reviews the series remunerated line protection challenges at the start and presents state of art answer to boost the space relay performance. The work describes the event Associate in Nursingd analysis of an integrated accommodative distance protection scheme. Development of the accommodative theme is within the specific space of incorporating the adaptive feature like accommodative reach setting of the relay because the compensation level changes in the series remunerated lines, for optimum reliability and security of the protection system. The relay adapts its characteristics in keeping with the informations received from the communication unit.
010-016
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03
Simulation of Si semiconducting material semiconductor devices
Author: M.M. Raddy
Abstract: Now-a-days SiGe HBTs area unit surpassing even the quickest III-V production devices in the high–speed orbit. The state-of-art in simulation of Si semiconducting material semiconductor devices is bestowed during this paper. A comprehensive course of action to model the device parameter characterization of High Frequency zero.1µm SiGe HBT is pictured that relies on the technique of direct parameter extraction. With the assistance of S-, Y- and Z- parameters, the equivalent circuit parameters are extracted during a perfect approach. The intrinsic and also the extrinsic parts of model area unit obtained employing a direct extraction technique that assists to search out out the bottom resistance from the Z- parameters.
017-021
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